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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 3DD201 DESCRIPTION With TO-3 package High collector-base breakdown voltage : VCBO=350V APPLICATIONS For TV horizontal output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER CHA IN Collector current Collector-base voltage Collector-emitter voltage E SEM NG Open base TC=25ae Open emitter OND IC CONDITIONS TOR UC VALUE 350 150 6 8 50 150 -55~150 UNIT V V V A W ae ae Emitter-base voltage Open collector Collector power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL R|E jc CHARACTERISTICS Thermal resistance junction to case MAX 1.5 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=350V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=10V 40 MIN 150 350 6 TYP. 3DD201 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE MAX UNIT V V V 1.5 1.5 0.5 0.1 V V mA mA CHA IN E SEM NG OND IC TOR UC 120 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 3DD201 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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